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dd ' H'M high temperature four-probe tester
, measuring temperature
dd ' H'R ℃ measurement accuracy
dd ' H'.% Measurement voltage
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High temperature four-probe tester
>M high-temperature four-probe tester
Also known as high-temperature four-probe square resistance tester, high-temperature four-probe resistivity tester, mainly for semiconductors Measurement of resistance, resistivity and sheet resistance properties of thin film materials. It adopts the in-line four-probe measurement principle and the national standard of single crystal silicon physical testing method and is designed and developed with reference to American standards. The dual electrical measurement combination mode can automatically eliminate boundary effects and make the measurement results more accurate.
>Principle of dual electrical measurement combination of high temperature four-probe tester
' H' >Technical specifications of high temperature four-probe tester
dd % 'H ', ' , ' H', , zbr ! dd % zbr! ! Measuring temperature: room temperature °
dd % zbr! ! Temperature control accuracy: ±℃, display accuracy: ±.℃
dd % zbr! ! Temperature rise slope: °/
dd % zbr! ! Measurement accuracy: .
dd % zbr! ! Resistivity: < dd %zbr! ! ~< dd %zbr! ! Ω
dd % zbr! ! Conductivity: < dd %zbr! ! ~< dd %zbr! ! /
dd % zbr! ! Block resistance: < dd %zbr! ! ~< dd %zbr! ! Ω/□
dd % zbr! ! Resistor ：< dd %zbr! ! ~< dd %zbr! ! Ω
dd % zbr! ! Probe spacing: ±
dd % zbr! ! Probe pressure: ~ adjustable
dd % zbr! !Insulation resistance between pins: ≥MΩ
dd % zbr! !The leakage rate standard of the vacuum chamber must be less than< dd %zbr! ! ?m/
dd % zbr! !Sample: diameter~ mm, thickness less than m
dd % zbr! ! Equipment size: m
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dd ' H',H, dd ' H' >High temperature four-probe test Instrument structure design
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dd ' H',H, dd % zbr! !, measuring thin film sheet resistance and sheet resistivity under high temperature and vacuum atmosphere
dd % zbr! !, host, software, high-temperature furnace, etc. are integrated into one, with visual operation
dd % zbr! !, achieving measurement in a pure atmosphere to ensure that the probe does not oxidize at high temperatures
dd % zbr! ! , The probe distance can be accurately adjusted under vacuum conditions, requiring the use of tungsten carbide probes, with the highest temperature resistance ℃
dd % zbr! !, Automatically adjust the test voltage, and there will be no sparks when the probe and film are in contact
dd % zbr! !, the temperature control and temperature measurement use the same sensor to ensure that the temperature of the sample collected each time is the actual temperature of the sample
dd % zbr! !, can be used with h or digital multimeter.
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Features of high temperature four-probe tester
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dd % zbr! ! dd ' H' , Measuring the electrical conductivity of semiconductor films and sheets
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dd % zbr! !, Measuring the resistivity of silicon and germanium single crystals
dd % zbr ! !, Measuring the sheet resistance of silicon epitaxial layer, diffusion layer and ion implantation layer
dd % zbr! !, Measuring the sheet resistance of conductive glass and other conductive films.
d dd ' H',H,( )Wuhan Bailibo Technology Co., Ltd. provides you with detailed product prices, product pictures and other product introduction information of M high temperature four-probe tester
. You can directly Contact the manufacturer for specific information on the M High Temperature Four-Probe Tester.
High temperature four probe tester